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20 1 50 8 b 1 / 1 1 n ??? n - channel mosfet jcs1 2 n50 c order codes ? marking ? package halogen free ? packaging device weight jcs1 2 n50 cc - o - c - n - b jcs1 2 n50 cc to - 220 c no tube 2. 15 g(typ) jcs1 2 n50 s c - o - s - n - b jcs1 2 n50 s c to - 2 6 3 no tube 1.37 g(typ) jcs1 2 n50 s c - o - s - n - a jcs1 2 n50 s c to - 2 6 3 no reel 1.37 g(typ) jcs1 2 n50f c - o - f - n - b jcs1 2 n50f c to - 220mf no tube 2.20 g(typ) ? package ? main characteristics id 13 a vdss 500 v rdson @vgs=10v 0.4 9 qg 2 7 nc ? ? ??? ? ? ups ? applications ? high frequency switching mode power supply ? electronic ballast ? ups ? ? ? ? c rss ( ? 14 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? low gate charge ? low c rss (typical 14 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs product ? order message r
jcs1 2 n50 c (? 20 1 50 8 b 2 / 1 1 4??nqn absolute ratings (tc=25 ) * $?u+ #+?p?4#yl$
*drain current limited by maximum junction temperature nm ,a parameter 0 ? symbol d value ) ! unit jcs1 2 n50cc /sc jcs1 2 n50fc ?p?$?u$du,#+ _ drain - source voltage v d ss 500 v e24$?u+ # drain current - c ontinuous i d t=25 t=100 13.0 13.0* a 8 8* a ??6y?$?u+ #?"? 1 ? drain current - p ulse ? note 1 ? i dm 52 52* a ?p?$d+ _ gate - source voltage v gss 30 v )6y?l?y6?g?"? 2 ? single pulsed avalanche energy ? note 2 ? e as 8 4 0 mj l?y+ #?"? 1 ? avalanche current ? note 1 ? i ar 13.0 a g?l?y6?g ?"? 1 ? repetitive a valanche e nergy ? note 1 ? e ar 4.8 mj `u1u ? ?6??+ _ ? e)[?"? 3 ? peak diode recovery dv/dt ? note 3 ? dv/dt 4.5 v/ns 5?7s)[ power dissipation p d t c =25 - derate above 25 190 49 w 1.57 0.39 w/ ?p?4#y ?, |#yz operating and storage temperature range t j t stg - 55 +150 4??p?&ty#yz maximum lead temperature for soldering purposes t l 300 r
jcs1 2 n50 c (? 20 1 50 8 b 3 / 1 1 + (m? e lectrical c haracteristic nm ,a parameter 0 ? symbol #a?5 tests conditions ? ? min l _ typ ?? max )! units g?(m? off C =250a, v bv /t =250a, a a ? r
jcs1 2 n50 c (? 20 1 50 8 b 4 / 1 1 + (m? e lectrical c haracteristics &(m? t hermal characteristic nm ,a parameter 0 ? symbol ?? value ) ! unit jcs1 2 n50cc /sc jcs1 2 n50fc 41u?,x& l thermal resistance, junction to case rth(j - c) 0.79 2.55 /w 4)?w,x&l thermal resistance, junction to ambient rth(j - a) 62.5 62.5 /w nm ,a parameter 0 ? symbol #a?5 tes ts conditions ? ? min l _ typ ?? max )! units ?g (m? switching C =25? /dt=100a/s (note 4) c =25 ?, 13a,di/dt 200a/s, vddbv 300s, 2 =25 ?,starting t 13a,di/dt 200a/s, vddbv pulse width 300s, duty cycle2 r
jcs1 2 n50 c (? 20 1 50 8 b 5 / 1 1 (mu?4? electrical characteristics (curves) on - region characteristics if vs vf transfer characteristics i r vs v r on - resistance variation vs drain current and gate voltage if (av) vs tc body diode forward voltage variat ion vs. source current and temperature if (av) vs tc capacitance characteristics if (av) vs tc capacitance characteristics if (av) vs tc r 0 2 4 6 8 10 12 0 10 20 30 v ds =100v v ds =250v q g toltal gate charge [nc] v gs gate source voltage[v] v ds =400v 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 25 150 v sd source-drain voltage[v] i dr reverse drain current[a] 10 0 10 1 10 0 10 1 i d drain current[a] v ds drain-source voltage[v] vgs top: 15.0v 10.0v 9.0v 8.0v 7.0v 6.5v buttom : 5.5v 0 5 10 15 20 0.2 0.4 0.6 v gs =20v r ds(on) drain-source on resistance [] 2 4 6 8 10 0.1 1 10 notes ? 1.250s pulse test
jcs1 2 n50 c (? 20 1 50 8 b 6 / 1 1 (mu?4? electrica l characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum safe operating area for jcs1 2 n50cc /sc maximum drain current vs . case temperature maximum safe operating area for jcs1 2 n50fc r 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d drain current [a] t c case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c =25 2 t j =150 3 single pulse 10s 100s -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes ? 1. v gs =0v 2. i d =250 ?? -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes ? 1. v gs =10v 2. i d =6.5a r d(on) (normalized) t j [ ]
jcs1 2 n50 c (? 20 1 50 8 b 7 / 1 1 (mu?4? electrica l characteristics (curves) transient thermal response curve for jcs1 2 n50fc tr ansient thermal response curve for jcs1 2 n50cc /sc r 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 t 2 t 1 d=0.5 0.2 0.1 0.05 0.02 z jc jc jc
jcs1 2 n50 c (? 20 1 50 8 b 8 / 1 1 6 package mechanical data to - 2 20 c )! u nit ? mm r
jcs1 2 n50 c (? 20 1 50 8 b 9 / 1 1 6 package mechanical data to - 2 63 4 reel )! u nit ? mm r
jcs1 2 n50 c (? 20 1 50 8 b 10 / 1 1 6 package mechanical data to - 2 20 mf )! u nit ? mm r
jcs1 2 n50 c (? 20 1 50 8 b 11 / 1 1 "?? _nm 1. yk "?+ $6u?yl$@ ,x{
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-1 note 1. jilin sino - microelectronics co., ltd sales its product either th rough direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to cont r

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